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MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
Preferred Device
Complementary Plastic Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.
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* Collector-Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60 Vdc - MJE171, MJE181 = 80 Vdc - MJE172, MJE182 DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Machine Model, C Human Body Model, 3B Pb-Free Packages are Available*
* * * * * *
3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 - 60 - 80 VOLTS 12.5 WATTS
TO-225AA CASE 77-09 STYLE 1 32 1
MAXIMUM RATINGS
Collector-Base Voltage
MARKING DIAGRAM
II II I I IIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII II I I III III II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III III I I III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIII III III I I I I III II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII II I I III II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII
Rating Symbol VCB Value 60 80 100 40 60 80 Unit Vdc MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Collector-Emitter Voltage VCEO Vdc Emitter-Base Voltage Collector Current Base Current VEB IC IB 7.0 3.0 6.0 1.0 Vdc Adc Adc - Continuous - Peak Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD PD 1.5 0.012 12.5 0.1 W W/_C W W/_C _C TJ, Tstg -65 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
YWW JE1xxG
Y WW JE1xx G
= Year = Work Week = Specific Device Code x = 70, 71, 72, 80, 81, or 82 = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
1
January, 2006 - Rev. 9
Publication Order Number: MJE171/D
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1. fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
THERMAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Current-Gain - Bandwidth Product (Note 1) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc)
Base-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc)
Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.5 Adc, VCE = 1.0 Vdc)
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TC = 150C) (VCB = 80 Vdc, IE = 0, TC = 150C) (VCB = 100 Vdc, IE = 0, TC = 150C)
Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0)
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
Characteristic
Characteristic
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MJE170, MJE171, MJE172, MJE170, MJE171, MJE172, MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 MJE171/MJE172 MJE181/MJE182 MJE180 MJE181 MJE182 MJE180 MJE181 MJE182 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO IEBO Cob hFE fT Symbol
qJC qJA
2 Min 50 50 30 12 40 60 80 - - - - - - - - - - - - - - Max 250 - - 1.2 1.5 2.0 0.3 0.9 1.7 0.1 0.1 0.1 0.1 0.1 0.1 60 40 - - - 83.4 Max 10 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc - _C/W _C/W pF Unit
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
TA 2.8 PD, POWER DISSIPATION (WATTS) 2.4 2.0 TC 14 12 10 TC
1.6 8.0 1.2 6.0 0.8 4.0 0.4 2.0 0 0 TA
20
40
60
80
100
120
140
160
T, TEMPERATURE (C)
Figure 1. Power Derating
VCC +30 V RC RB D1 SCOPE t, TIME (ns)
1K 500 300 200 100 50 30 20 10 5 3 2 NPN MJE181/182 PNP MJE171/172 3 5 10 tr VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25C
25 ms +11 V 0 -9.0 V 51
tr, tf 10 ns -4 V DUTY CYCLE = 1.0% RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
td
1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS)
Figure 2. Switching Time Test Circuit
Figure 3. Turn-On Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02
D = 0.5 0.2 0.1 0.05 0.02 0.01 0 (SINGLE PULSE) qJC(t) = r(t) qJC qJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk)
t1 t2 DUTY CYCLE, D = t1/t2
0.05
0.1
0.2
0.5
1.0
2.0 t, TIME (ms)
5.0
10
20
50
100
200
Figure 4. Thermal Response
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3
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
ACTIVE-REGION SAFE OPERATING AREA
10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 dc 5.0 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 ms 500 ms 10 5.0 2.0 1.0 0.5 0.2 0.1 5.0 ms dc 100 ms 500 ms
0.05 0.02 0.01 1.0
0.05 0.02
TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
0.01 1.0
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of a transistor - average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) t 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
10K 5K 3K 2K 1K t, TIME (ns) 500 300 200 100 50 30 20 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 tf NPN MJE181/182 PNP MJE171/172 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
100 70 C, CAPACITANCE (pF) 50
PNP MJE171/MJE172 NPN MJE181/MJE182
Cib
TJ = 25C
30 20 Cob 10
10
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMPS)
2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
30
50
Figure 7. Turn-Off Time
Figure 8. Capacitance
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4
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
ORDERING INFORMATION
Device MJE170 MJE170G MJE171 MJE171G MJE172 MJE172G MJE180 MJE180G MJE181 MJE181G MJE182 MJE182G Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) 500 Units / Box Shipping
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5
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
PACKAGE DIMENSIONS
TO-225
CASE 77-09 ISSUE Z
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M M
A
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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6
MJE171/D

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